IAUCN04S7N027GATMA1 vs IAUC100N04S6N028ATMA1 Vergleich

Detaillierter Direktvergleich von IAUCN04S7N027GATMA1 von Infineon und IAUC100N04S6N028ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUCN04S7N027GATMA1 IAUC100N04S6N028ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,72 $0,42
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vds max) 40 V —
Continuous Drain Current (Id) 117 A —
On-Resistance (Rds(on) max) 2.67 mOhm —
Power Dissipation (Pd) 70 W (Tc) —
Gehäuse / Bauform PG-THSOG-4-1 (SSO4G 5x6) —
Montageart Surface Mount Surface Mount
Qualification Automotive —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] -55 °C to +175 °C
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL] —
Substrate Compatibility IMS substrates and legacy FR-4 —
Series — OptiMOS 6 40V
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) at T_C=25°C — 100 A
Pulsed Drain Current (I_DM) — 400 A
R_DS(on) max @ V_GS=10V — 2.8 mΩ (typical)
Gate Threshold Voltage (V_GS(th)) — 1.5 V to 2.5 V
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g in nC]
Power Dissipation (P_D) at T_C=25°C — 62 W
Gehäuse — PG-TDSON-8 (TDSON-8)
Automotive Qualified — Yes

Datenblätter & Ressourcen

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