IAUCN04S7N027GATMA1 vs IAUC100N04S6N028ATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N027GATMA1 por Infineon y IAUC100N04S6N028ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 ✓ ActivoInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N027GATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| Encapsulado / Carcasa | PG-THSOG-4-1 (SSO4G 5x6) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55 °C to +175 °C |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL] | — |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Series | — | OptiMOS 6 40V |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Encapsulado | — | PG-TDSON-8 (TDSON-8) |
| Automotive Qualified | — | Yes |