IAUCN04S7N037GATMA1 vs IAUCN04S7L005ATMA1 Vergleich

Detaillierter Direktvergleich von IAUCN04S7N037GATMA1 von Infineon und IAUCN04S7L005ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUCN04S7N037GATMA1 IAUCN04S7L005ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,89 $0,85
Manufacturer Infineon Technologies —
Series OptiMOS 7 —
Technology Trench MOSFET, N-Channel OptiMOS 7 (trench N-channel MOSFET)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tj 91 A —
On-State Resistance RDS(on) typical 3.65 mΩ at VGS = 10 V —
Power Dissipation (PD) at Tc 57 W —
Gehäuse SSO4G 5x6 mm² (PG-THSOG-4-1) PG-TDSON-8-43 (TDSON-8)
Montageart Surface Mount (IMS substrate attach compatible) Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Betriebstemperaturbereich [DATA_NEEDED: junction/ambient temperature limits] -55°C to +175°C (Tj)
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25°C) — 430 A (Tj)
Continuous Drain Current (I_D, T_C=100°C) — [DATA_NEEDED: I_D at T_C=100°C]
On-Resistance R_DS(on) max — 0.52 mΩ
Power Dissipation (P_D) — 179 W (T_C)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge (Q_g) — [DATA_NEEDED: total Q_g in nC]
Pin-Anzahl — 8
Lead-Free — Yes

Datenblätter & Ressourcen

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