IAUCN04S7N037GATMA1 vs IAUCN04S7L005ATMA1 Сравнение
Подробное сравнение бок о бок IAUCN04S7N037GATMA1 от Infineon и IAUCN04S7L005ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ АктивенInfineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN04S7N037GATMA1 | IAUCN04S7L005ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,89 | $0,85 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Technology | Trench MOSFET, N-Channel | OptiMOS 7 (trench N-channel MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| Корпус | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-TDSON-8-43 (TDSON-8) |
| Тип монтажа | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Диапазон рабочих температур | [DATA_NEEDED: junction/ambient temperature limits] | -55°C to +175°C (Tj) |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 430 A (Tj) |
| Continuous Drain Current (I_D, T_C=100°C) | — | [DATA_NEEDED: I_D at T_C=100°C] |
| On-Resistance R_DS(on) max | — | 0.52 mΩ |
| Power Dissipation (P_D) | — | 179 W (T_C) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: total Q_g in nC] |
| Число выводов | — | 8 |
| Lead-Free | — | Yes |