IAUCN08S7L033ATMA1 vs IAUC120N06S5N011ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7L033ATMA1 von Infineon und IAUC120N06S5N011ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN08S7L033ATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | -55°C to +175°C (Tj) |
| Gehäuse | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | — |
| Technology | OptiMOS 7 trench MOSFET | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020, typical for this package) | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS-5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 120 A (Tc=25°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | — | 310 A (Tj) |
| On-Resistance Rds(on) max | — | 1.1 mΩ at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | — | 188 W (Tc=25°C) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |