IAUCN08S7L033ATMA1 vs IAUC120N06S5N011ATMA1 비교

다음의 상세 나란히 비교: IAUCN08S7L033ATMA1 제조: Infineon 및 IAUC120N06S5N011ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 활성

사양 비교

파라미터 IAUCN08S7L033ATMA1 IAUC120N06S5N011ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.86 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 —
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
동작 온도 범위 -55°C to +175°C (TJ) -55°C to +175°C (Tj)
패키지 PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-53 (SSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) —
Technology OptiMOS 7 trench MOSFET —
RoHS 상태 Compliant —
MSL 레벨 1 (per JEDEC J-STD-020, typical for this package) 1 (per JEDEC J-STD-020)
Product Family — OptiMOS-5
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) — 120 A (Tc=25°C, Vgs=10V)
Pulsed Drain Current (Idm) — 310 A (Tj)
On-Resistance Rds(on) max — 1.1 mΩ at Vgs=10 V
Gate-Source Voltage (Vgs) max — ±20 V
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total value]
Power Dissipation (Pd) — 188 W (Tc=25°C)
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant

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