IAUCN08S7L033ATMA1 vs IAUCN04S7N027GATMA1 Vergleich

Detaillierter Direktvergleich von IAUCN08S7L033ATMA1 von Infineon und IAUCN04S7N027GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUCN08S7L033ATMA1 IAUCN04S7N027GATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,86 $0,72
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
Betriebstemperaturbereich -55°C to +175°C (TJ) [DATA_NEEDED: operating temperature range]
Gehäuse PG-TDSON-8-34 (SSO8, 5x6 mm²) —
Montageart Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) Automotive
Technology OptiMOS 7 trench MOSFET —
RoHS-Status Compliant Compliant
MSL-Level 1 (per JEDEC J-STD-020, typical for this package) [DATA_NEEDED: MSL]
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Gehäuse / Bauform — PG-THSOG-4-1 (SSO4G 5x6)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

Datenblätter & Ressourcen

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