IAUCN08S7L033ATMA1 vs IAUCN04S7N027GATMA1 Сравнение
Подробное сравнение бок о бок IAUCN08S7L033ATMA1 от Infineon и IAUCN04S7N027GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN08S7L033ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,86 | $0,72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Диапазон рабочих температур | -55°C to +175°C (TJ) | [DATA_NEEDED: operating temperature range] |
| Корпус | PG-TDSON-8-34 (SSO8, 5x6 mm²) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | Automotive |
| Technology | OptiMOS 7 trench MOSFET | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 (per JEDEC J-STD-020, typical for this package) | [DATA_NEEDED: MSL] |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| Корпус / Типоразмер | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |