IAUCN08S7N024ATMA1 vs IAUCN04S7N027GATMA1 Vergleich

Detaillierter Direktvergleich von IAUCN08S7N024ATMA1 von Infineon und IAUCN04S7N027GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUCN08S7N024ATMA1 IAUCN04S7N027GATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,89 $0,72
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench —
Gehäuse PG-TDSON-8-34 (8-pin, exposed pad) —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +175C (typical automotive) [DATA_NEEDED: operating temperature range]
Verlustleistung (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 —
RoHS Compliance Compliant —
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL]
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Gehäuse / Bauform — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
RoHS-Status — Compliant
Substrate Compatibility — IMS substrates and legacy FR-4

Datenblätter & Ressourcen

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