IAUCN08S7N024ATMA1 vs IAUCN04S7N027GATMA1 对比

详细并排对比 IAUCN08S7N024ATMA1 出自 Infineon 和 IAUCN04S7N027GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 ✓ 量产中
Infineon
IAUCN04S7N027GATMA1 IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7N024ATMA1 IAUCN04S7N027GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $0.72
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench —
封装 PG-TDSON-8-34 (8-pin, exposed pad) —
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +175C (typical automotive) [DATA_NEEDED: operating temperature range]
功耗(Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 —
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL]
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
封装 / 外壳 — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
RoHS 状态 — Compliant
Substrate Compatibility — IMS substrates and legacy FR-4

数据手册与资源

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