IAUCN08S7N024ATMA1 vs IAUCN08S7N034ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7N024ATMA1 von Infineon und IAUCN08S7N034ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN08S7N024ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $1,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | OptiMOS™ 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25C | 165 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 7 trench | — |
| Gehäuse | PG-TDSON-8-34 (8-pin, exposed pad) | PG-TDSON-8-34 (TDSON EP) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (typical automotive) | — |
| Verlustleistung (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL 1 (unlimited floor life) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 3.4 mΩ |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | — | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | — | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 23 pF |
| Power Dissipation (P<sub>D</sub>) | — | 118 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| RoHS-Status | — | Compliant |