IAUCN10S5L110TATMA1 vs IAUCN08S7N024TATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN10S5L110TATMA1 von Infineon und IAUCN08S7N024TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ AktivInfineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN10S5L110TATMA1 | IAUCN08S7N024TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,08 | $2,45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 7 |
| Technology | N-Channel MOSFET, Trench, Logic Level | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Gehäuse | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260°C peak reflow) | — |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | AEC-Q101 |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) at Tj | — | 165 A |
| Power Dissipation (Pd) at Tc | — | 157 W |
| Rds(on) Max at Vgs=10V | — | 2.44 mOhm |
| Gehäuse / Bauform | — | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) |
| Cooling | — | Top-side cooled |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ] |