IAUCN10S7N021ATMA1 vs IPG16N10S461AATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN10S7N021ATMA1 von Infineon und IPG16N10S461AATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN10S7N021ATMA1 | IPG16N10S461AATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $0,82 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8-10 (Wettable Flank) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Type | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | — | 16 A |
| On-Resistance R_DS(on) typ. | — | 61 mΩ |
| Total Power Dissipation (Ptot) | — | 29 W (T_C = 25°C) |
| Configuration | — | 2 N-Channel (Dual, separate) |
| Gate Threshold Voltage V_GS(th) typ. | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Temperature | — | 175 °C |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Terminal Count | — | 8 |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Built-in Body Diode | — | Yes |
| Channel Mode | — | Enhancement |