IAUCN10S7N021ATMA1 vs IPG16N10S461AATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and IPG16N10S461AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN10S7N021ATMA1 IPG16N10S461AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) OptiMOS™ trench
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-10 (Wettable Flank)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Product Type — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 16 A
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Operating Temperature Range — -55 °C to +175 °C
Terminal Count — 8
MSL Level — [DATA_NEEDED: MSL rating]
Built-in Body Diode — Yes
Channel Mode — Enhancement

Datasheets & Resources

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