IAUS300N08S5N012 vs IAUT300N08S5N012ATMA2 Vergleich
Detaillierter Direktvergleich von IAUS300N08S5N012 von Infineon und IAUT300N08S5N012ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
IAUS300N08S5N012 ✓ AktivInfineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IAUS300N08S5N012 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,88 | $2,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC | 300 A | — |
| On-Resistance R<sub>DS(on)</sub> Max at VGS=10V | 1.2 mΩ typical | — |
| Gate-Source Threshold Voltage VGS(th) | 3.8 V at 275 µA | — |
| Power Dissipation (PD) at TC | 375 W | — |
| Betriebstemperaturbereich | -55°C to +175°C | -55 °C to +175 °C (TJ) |
| Gehäuse | PG-HSOG-8-1 (Surface Mount) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260°C peak reflow) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | RoHS compliant (Green product) | Compliant |
| Avalanche Rating | 100% Avalanche tested | — |
| Technology | OptiMOS 5 planar trench | — |
| Terminals | 8 | — |
| Product Family | — | OptiMOS™-5 80 V |
| Transistortyp | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |