IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
Teilenummer: IAUS300N08S5N012 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $5.28 | $5,28 |
| 10 | $4.75 | $47,50 |
| 100 | $4.21 | $421,00 |
| 500 | $3.95 | $1.975,00 |
| 1.000 | $3.88 | $3.880,00 |
IAUS300N08S5N012 Übersicht
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and switch high currents at high frequencies. Power MOSFETs sit inside the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> power management switch. They are differentiated from signal MOSFETs by low on-resistance, high current handling, and avalanche ruggedness, making them the workhorse of switched-mode power supplies (SMPS), motor drives, and load switches.
The IAUS300N08S5N012's headline figures include 1.2 mΩ typical R<sub>DS(on)</sub> at 10 V VGS, 300 A continuous Id, 375 W power dissipation, and an avalanche-rated single-pulse drain current. Its threshold voltage VGS(th) of 3.8 V at 275 µA supports standard 12 V automotive gate-drive architectures, while the optimized OptiMOS 5 cell shrinks switching losses and reduces Qg for higher-frequency, higher-efficiency designs.
The OptiMOS 5 process technology uses a planar trench structure to minimize R<sub>DS(on)</sub> × area figure-of-merit, which directly translates to lower conduction loss in heavy-load conditions. Combined with 100% avalanche-tested ruggedness and a low thermal resistance package, the IAUS300N08S5N012 is engineered for high-reliability environments where long-term operation at high junction temperature is required.
Typical applications include high-current automotive 48 V/12 V load switches, electric power steering (EPS) motor drives, brake-by-wire systems, DC-DC converter primary switches, battery management protection, and high-power industrial SMPS. Designers choose this part when conduction loss dominates the thermal budget and ultra-low R<sub>DS(on)</sub> is mandatory.
When designing, derate Id to roughly 50% of the 300 A rating once package thermal resistance and PCB copper are accounted for; a continuous 150 A load on a 1 oz copper 4-layer board typically requires at least 6 cm² of copper under the PG-HSOG-8-1 thermal pad. Always gate-drive with a dedicated driver such as the EiceDRIVER 1EDN series to keep switching loss in check.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für IAUS300N08S5N012 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IAUS300N08S5N012 (gleiche Bauform und Footprint) – abweichend in Package, Operating Temperature Range, RoHS Compliance, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IAUS300N08S5N012ATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IAUS300N08S5N012TATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IAUT300N08S5N012ATMA2
✅ Drop-In✓ Auf Lager
$2.2 / Stück
Datenblatt ansehen →VBGQT1801
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IAUS300N08S5N012 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC | 300 A |
| On-Resistance R<sub>DS(on)</sub> Max at VGS=10V | 1.2 mΩ typical |
| Gate-Source Threshold Voltage VGS(th) | 3.8 V at 275 µA |
| Power Dissipation (PD) at TC | 375 W |
| Betriebstemperaturbereich | -55°C to +175°C |
| Gehäuse | PG-HSOG-8-1 (Surface Mount) |
| Montageart | Surface Mount |
| MSL-Level | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | RoHS compliant (Green product) |
| Avalanche Rating | 100% Avalanche tested |
| Technology | OptiMOS 5 planar trench |
| Terminals | 8 |
IAUS300N08S5N012 Pin-Konfiguration
| Pin 1 | Source — Kelvin source (low-inductance gate return) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (also exposed thermal pad) |
Sicherer Arbeitsbereich - IAUS300N08S5N012
Typische Anwendungen
IAUS300N08S5N012 ist geeignet für 6 Anwendungs: Automotive 48V/12V High-Current Load Switch, Electric Power Steering (EPS) Motor Drive, Brake-by-Wire and Chassis Control, High-Power DC-DC Converter Primary Switch, Battery Management System (BMS) Protection, Industrial High-Power SMPS and Welding.
Automotive 48V/12V High-Current Load Switch
The IAUS300N08S5N012 is purpose-built for automotive high-current load switches where 80 V V<sub>DS</sub> provides headroom above 48 V bus transients and 1.2 mΩ R<sub>DS(on)</sub> keeps I²R conduction loss low at 100-200 A peak loads. Placed between the battery rail and a downstream DC-DC or e-fuse, its 300 A continuous rating supports sustained current without thermal runaway. Compared to smaller 5x6 mm MOSFETs, the PG-HSOG-8-1 footprint delivers superior thermal coupling - critical when packaging size is constrained by PCB area. AEC-Q101 qualification and 175°C Tj rating cover powertrain, chassis, and body-electronics environments where ambient under-hood temperatures regularly exceed 125°C.
Empfohlen
Electric Power Steering (EPS) Motor Drive
The IAUS300N08S5N012 suits EPS brushless-DC motor half-bridge stages where 80 V V<sub>DS</sub> comfortably covers 12 V/24 V automotive rails plus inductive flyback transients. Its 1.2 mΩ R<sub>DS(on)</sub> minimises conduction loss during the high-current phases of steering assist, directly improving system efficiency and reducing heatsink mass. The PG-HSOG-8-1 exposed pad gives ~1°C/W thermal resistance when soldered to 6 cm² of 1 oz copper, supporting 100+ A RMS continuous operation. AEC-Q101, MSL1, and 100% avalanche-test compliance satisfy the long-term reliability expectations of EPS modules.
Empfohlen
Brake-by-Wire and Chassis Control
Brake-by-wire electro-mechanical actuators demand MOSFETs that combine ultra-low R<sub>DS(on)</sub> with AEC-Q101 reliability. The IAUS300N08S5N012's 1.2 mΩ typical R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> minimises heat buildup inside sealed actuator housings where ambient already runs hot. The 175°C maximum junction temperature tolerates transient thermal excursions during emergency braking. As a high-side or low-side switch in the actuator H-bridge, the PG-HSOG-8-1 package simplifies PCB layout because the exposed drain pad doubles as a thermal spreader, reducing the need for external heatsinks.
Empfohlen
High-Power DC-DC Converter Primary Switch
The IAUS300N08S5N012 can serve as the primary-side high-current switch in multi-kilowatt automotive DC-DC converters that step 48 V down to 12 V or 24 V down to 12 V. Its 1.2 mΩ R<sub>DS(on)</sub> and 300 A continuous rating support >3 kW designs without paralleling, simplifying layout and reducing gate-drive complexity. The 80 V V<sub>DS</sub> rating provides 30% margin above a typical 48 V nominal bus, accommodating inductive ringing and transient overshoots. OptiMOS 5's reduced Qg translates to lower switching loss at 100-200 kHz switching frequencies, directly improving converter efficiency.
Empfohlen
Battery Management System (BMS) Protection
The IAUS300N08S5N012 is suitable for high-current battery pack protection disconnect switches in EV and industrial energy-storage systems. With 300 A continuous drain current and 80 V V<sub>DS</sub>, it can interrupt a 48 V battery string during fault events without derating. The 100% avalanche-tested rating ensures robustness under inductive kickback, and the OptiMOS 5 cell structure keeps R<sub>DS(on)</sub> stable across the full temperature range - essential for predictable voltage-drop behaviour in battery-management state-of-charge calculations.
Empfohlen
Industrial High-Power SMPS and Welding
In industrial switched-mode power supplies, induction heaters, and welding inverters the IAUS300N08S5N012 delivers 300 A continuous current at 80 V with the ruggedness required for repetitive pulsed loads. Its 100% avalanche-tested construction absorbs energy from leakage inductance during commutation, while the 1.2 mΩ R<sub>DS(on)</sub> reduces conduction loss in heavy-duty continuous operation. The PG-HSOG-8-1 surface-mount package enables automated high-volume assembly versus traditional TO-247/TO-3P through-hole parts, lowering manufacturing cost.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IAUS300N08S5N012 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IAUS300N08S5N012ATMA1 | IAUS300N08S5N012TATMA1 | IAUT300N08S5N012 | VBGQT1801 |
|---|---|---|---|---|---|
| Package | PG-HSOG-8-1 | PG-HSOG-8-1 - same | PG-HSOG-8-1 - same | PG-HSOG-8-1 - same | TOLL (TO-Leadless) - cross-compatible footprint |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Chinese domestic manufacturer |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 80 V | 80 V |
Wichtigste Unterscheidungsmerkmale
- Lowest R<sub>DS(on)</sub> × package-size ratio in its class (vs. VBGQT1801)
- AEC-Q101 automotive qualification with full traceability (vs. IAUT300N08S5N012)
- 100% avalanche-tested single-pulse ruggedness (vs. IAUS300N08S5N012ATMA1)
Designhinweise
Estimated: At a continuous 150 A load, conduction loss equals I² × R<sub>DS(on)</sub> = 150² × 0.0012 ≈ 27 W. With 6 cm² of 1 oz copper under the exposed pad (θJA ≈ 12°C/W), junction temperature rise above ambient is ~324°C, which exceeds the 175°C Tj rating - derate to ≈80 A continuous or add active cooling. Always solder the exposed pad to a continuous copper pour; thermal vias under the pad reduce θJA by an additional 20-30%.
Use a 4-layer PCB with at least 2 oz outer copper on the drain-pad footprint. Place gate-driver ICs within 10 mm of the gate pin to minimise gate-loop inductance; the PG-HSOG-8-1's kelvin-source pins (1-3, 5-7) must be connected directly to the gate-driver ground return, NOT to the power-source plane, to avoid source-induced gate-oscillation.
Do not exceed V<sub>GS</sub> = ±20 V absolute maximum - even a brief gate-overshoot above this threshold destroys the gate oxide. Add a gate-source resistor of 10-100 kΩ to hold the MOSFET off during controller power-up, and a TVS diode (e.g. SMBJ16A) from gate to source if the gate-drive path is long or noisy. Verify R<sub>DS(on)</sub> at the actual operating temperature, not the 25°C datasheet value, since R<sub>DS(on)</sub> roughly doubles at 125°C.
Place a 1 µF X7R ceramic bypass capacitor between V<sub>DD</sub> and PGND of the gate-driver IC, with the loop area kept under 0.5 cm². Route the high-current source and drain paths on opposite PCB layers to minimise loop inductance; the PG-HSOG-8-1's 8 pins allow splitting source current across pins 1-3 and 5-7 to reduce per-pin current density and improve thermal spreading.
Compliance-Informationen
RoHS compliant Green product per Infineon datasheet. AEC-Q101 qualified (AEC-Q100 family for discrete semiconductors). MSL1 to 260°C peak reflow.
