IAUZ30N08S5N186ATMA1 vs IAUZ18N10S5L420ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ30N08S5N186ATMA1 von Infineon und IAUZ18N10S5L420ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ AktivInfineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ30N08S5N186ATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,48 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID, Tj) | 30 A | — |
| Power Dissipation (PD, Tc) | 41 W | — |
| On-State Resistance (RDS(on)) | 18.6 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (automotive) | — |
| Gehäuse | PG-TSDSON-8-32 (5x6 mm) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 100V |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Total Gate Charge (Qg) typ. | — | 8.5 nC |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Configuration | — | Single with built-in diode |