IAUZ30N08S5N186ATMA1 vs IAUZ40N10S5N130ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ30N08S5N186ATMA1 von Infineon und IAUZ40N10S5N130ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ AktivInfineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ30N08S5N186ATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,52 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | OptiMOS 5 (super-junction trench) |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID, Tj) | 30 A | — |
| Power Dissipation (PD, Tc) | 41 W | — |
| On-State Resistance (RDS(on)) | 18.6 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (automotive) | -55°C to +175°C (TJ) |
| Gehäuse | PG-TSDSON-8-32 (5x6 mm) | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUZ40N10S5N130ATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| RDS(on) max at VGS=10V | — | 13 mΩ |
| RDS(on) typical | — | 10 mΩ |
| Maximum Power Dissipation (Tc) | — | 68 W |
| Lead-Free / RoHS | — | ROHS3 Compliant |