IAUZ40N06S5L050ATMA1 vs BSC146N10LS5ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ40N06S5L050ATMA1 von Infineon und BSC146N10LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUZ40N06S5L050ATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,74 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | — |
| Drain Current at T<sub>j</sub> | 90 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 µA | — |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 71 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TSDSON-8-33 (TSDSON-8) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | OptiMOS 5 (logic-level) |
| Automotive Qualification | AEC-Q100 qualified | — |
| RoHS-Status | Compliant | Compliant |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 44 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (typ. ~1.7 V) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Betriebstemperaturbereich | — | -55 C to +150 C (TJ max) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |