IAUZ40N08S5N100ATMA1 vs IAUZ40N06S5L050ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ40N08S5N100ATMA1 von Infineon und IAUZ40N06S5L050ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ AktivInfineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ40N08S5N100ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,71 |
| Technology | OptiMOS-5 N-Channel MOSFET | OptiMOS 5 (super-junction N-channel) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 40 A | — |
| Power Dissipation (PD, Tc=25°C) | 68 W | — |
| On-Resistance RDS(on) max | 10 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | — |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | — |
| Gate-Source Voltage VGS max | ±20 V | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | — |
| Gehäuse | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm | PG-TSDSON-8-33 (TSDSON-8) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| RoHS-Status | Compliant | Compliant |
| Channel Type | N-Channel | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | — | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | — | 5 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | — | 6.4 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 2.2 V at 29 µA |
| Total Gate Charge Q<sub>G</sub> | — | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 71 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |