IAUZN10S7L289ATMA1 vs IAUCN10S7L290TATMA1 Vergleich
Detaillierter Direktvergleich von IAUZN10S7L289ATMA1 von Infineon und IAUCN10S7L290TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZN10S7L289ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | OptiMOS™ 7 |
| Technology | Trench MOSFET (N-Channel) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tj) | 27 A | — |
| Power Dissipation (Ptot, Tc=25°C) | 45 W | — |
| On-State Resistance (RDS(on), max, VGS=10V) | 28.9 mΩ | — |
| Gehäuse | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Montageart | Surface Mount | Surface Mount |
| Automotive Grade | AEC-Q100 qualified (Automotive MOSFET) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typical] |
| Betriebstemperaturbereich | -55°C to +175°C (Tj) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | — |
| Pin-Anzahl | 8 | — |
| RoHS Compliance | Yes | Compliant |
| Transistortyp | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q100 qualified |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |