IAUZN10S7L289ATMA1 vs IAUCN10S7L290TATMA1 比較
詳細な並列比較: IAUZN10S7L289ATMA1 メーカー: Infineon および IAUCN10S7L290TATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUZN10S7L289ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.92 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | OptiMOS™ 7 |
| Technology | Trench MOSFET (N-Channel) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tj) | 27 A | — |
| Power Dissipation (Ptot, Tc=25°C) | 45 W | — |
| On-State Resistance (RDS(on), max, VGS=10V) | 28.9 mΩ | — |
| パッケージ | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Grade | AEC-Q100 qualified (Automotive MOSFET) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typical] |
| 動作温度範囲 | -55°C to +175°C (Tj) | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant | — |
| ピン数 | 8 | — |
| RoHS Compliance | Yes | Compliant |
| トランジスタタイプ | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| 動作接合温度 | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q100 qualified |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |