IDTADC1210S065HN-C18 vs IDTADC1210S105HN-C18 Vergleich
Detaillierter Direktvergleich von IDTADC1210S065HN-C18 von Renesas Electronics und IDTADC1210S105HN-C18 von Renesas Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Renesas Electronics
IDTADC1210S065HN-C18 - 12-bit 65 MSPS ADC | Renesas (IDT)
IDTADC1210S065HN-C18 NrndRenesas Electronics
IDTADC1210S105HN-C18 - 12-bit 105MSPS ADC, 40-VFQFPN | IDT/Renesas
IDTADC1210S105HN-C18 ✓ AktivSpezifikationsvergleich
| Parameter | IDTADC1210S065HN-C18 | IDTADC1210S105HN-C18 |
|---|---|---|
| Marke | Renesas Electronics | Renesas Electronics |
| Kategorie | ADC/DAC | ADC/DAC |
| Lebenszyklusstatus | NRND | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,05 | $21,45 |
| Auflösung | 12 bit | 12 bit |
| Number of Channels | 1 | 1 |
| Abtastrate | 65 MSPS | — |
| Architecture | Pipelined | Pipelined |
| Analog Supply Voltage (VDDA) | 3.0 V typical (3.9 V abs max) | 3 V (typical) |
| Digital Output Supply (VDDO) | 1.8 V to 3.3 V | — |
| Output Interface | CMOS parallel or LVDS DDR (selectable) | — |
| Input Type | Single-ended analog input (switched-capacitor) | — |
| Operating Ambient Temperature | -40C to +85C | — |
| Junction Temperature (max) | 125C | — |
| Storage Temperature | -55C to +125C | -55 C to +125 C |
| Gehäuse | 40-pin HVQFN (6x6 mm) with exposed thermal pad | 40-VFQFPN Exposed Pad |
| Montageart | Surface Mount | — |
| Control Mode | Pin-control (CS held HIGH at power-up) and SPI serial | — |
| RoHS-Status | Compliant (per Renesas/IDT product family) | Compliant (per Renesas product page) |
| Sample Rate (this grade) | — | 105 Msps |
| Maximum Sample Rate (family) | — | 125 Msps |
| Analog Input Bandwidth | — | 600 MHz |
| SNR | — | 70 dBFS |
| SFDR | — | 86 dBc |
| Output Supply Voltage (VDDO) | — | 1.8 V (typical) |
| Analog Supply Range | — | 0.4 V to 3.9 V (absolute max) |
| Power Dissipation | — | 430 mW at 80 Msps |
| Eingangsspannungsbereich | — | 1 Vp-p to 2 Vp-p (flexible) |
| Digital Output Format | — | CMOS or LVDS DDR |
| Output Coding | — | Offset binary, two's complement, gray code |
| Configuration Interface | — | SPI (Serial Peripheral Interface) |
| Clock Input Division | — | Divided by 2 internally |
| Duty Cycle Stabilizer | — | Integrated |
| Out-of-Range Detection | — | Fast OTR flag |
| Operating Temperature (Tamb) | — | -40 C to +85 C |
| Maximum Junction Temperature | — | 125 C |