IGB50N60T vs IGB50N60TATMA1 Vergleich
Detaillierter Direktvergleich von IGB50N60T von Infineon und IGB50N60TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGB50N60T | IGB50N60TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,36 | $2,20 |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous DC Collector Current (IC, TC=100°C) | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | 150 A |
| Total Power Dissipation (Ptot, TC=25°C) | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | 5.0 V (typical), 4.5 V min / 6.5 V max | — |
| Gate-Emitter Voltage Maximum (VGES) | ±20 V | — |
| Collector-Emitter Saturation Voltage (VCE(sat), IC=50 A, VGE=15 V) | [DATA_NEEDED: VCE(sat) exact value] | — |
| Zero-Temperature-Coefficient Point (IC at VCE(sat) nominal) | [DATA_NEEDED: IC nominal] | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon value] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff value] | — |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | 1.7 mJ (typical) | — |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | 10 µs (typical) | — |
| Betriebs-Sperrschichttemperaturbereich | -40 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Gehäuse | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) | PG-TO263-3-2 (D2PAK / TO-263) |
| Montageart | Surface Mount (D2Pak tab acts as drain/collector) | Surface Mount |
| Technology Family | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Technology | — | Trench + Field-Stop |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| Betriebs-Sperrschichttemperatur | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| MSL-Level | — | 1 |
| Configuration | — | Single |