IGB50N60T vs IGB50N60TATMA1 Comparación
Comparación detallada lado a lado de IGB50N60T por Infineon y IGB50N60TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IGB50N60T | IGB50N60TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,36 | $2,20 |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous DC Collector Current (IC, TC=100°C) | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | 150 A |
| Total Power Dissipation (Ptot, TC=25°C) | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | 5.0 V (typical), 4.5 V min / 6.5 V max | — |
| Gate-Emitter Voltage Maximum (VGES) | ±20 V | — |
| Collector-Emitter Saturation Voltage (VCE(sat), IC=50 A, VGE=15 V) | [DATA_NEEDED: VCE(sat) exact value] | — |
| Zero-Temperature-Coefficient Point (IC at VCE(sat) nominal) | [DATA_NEEDED: IC nominal] | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon value] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff value] | — |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | 1.7 mJ (typical) | — |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | 10 µs (typical) | — |
| Rango de temperatura de unión de funcionamiento | -40 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Encapsulado | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) | PG-TO263-3-2 (D2PAK / TO-263) |
| Tipo de montaje | Surface Mount (D2Pak tab acts as drain/collector) | Surface Mount |
| Technology Family | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Technology | — | Trench + Field-Stop |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Tensión de saturación colector-emisor (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| Temperatura de unión de funcionamiento | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| Nivel MSL | — | 1 |
| Configuration | — | Single |