IGD06N60TATMA1 vs IKD06N60RATMA1 Vergleich
Detaillierter Direktvergleich von IGD06N60TATMA1 von Infineon und IKD06N60RATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGD06N60TATMA1 | IKD06N60RATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Transistors | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,89 |
| Manufacturer | Infineon Technologies | — |
| Series | TRENCHSTOP IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V |
| Continuous Collector Current (IC) at TC=25°C | 12 A | — |
| Continuous Collector Current (IC) at TC=100°C | 6 A | — |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) | — |
| Maximum Power Dissipation (Ptot) | 88 W | — |
| Gate-Emitter Voltage (VGE) | ±20 V | [DATA_NEEDED: VGE max rating] |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | 1.5 V (typical) | — |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff] | — |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode | — |
| Betriebs-Sperrschichttemperatur | -40 °C to +175 °C | — |
| Storage Temperature | -55 °C to +150 °C | — |
| Gehäuse | PG-TO252-3-11 (DPAK / TO-252) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Transistortyp | — | IGBT - Trench Field Stop with anti-parallel diode |
| Configuration | — | Single with built-in diode |
| Continuous Collector Current (IC) at TC=25C | — | 12 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: pulsed collector current] |
| Maximum Power Dissipation | — | 100 W |
| Technology | — | TRENCHSTOP RC-IGBT3 (Reverse Conducting) |
| VCE(sat) at IC=6A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical] |
| Diode Forward Voltage (VF) at IF=6A | — | [DATA_NEEDED: VF typical] |
| Betriebstemperaturbereich | — | -40C to +150C (junction) |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Automotive Qualified | — | Yes (per FindIC listing) |
| Switching Frequency Range (typical) | — | 4 kHz to 20 kHz (hard-switching) |