IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon
Teilenummer: IKD06N60RATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.02 | $1.020,00 |
| 2.500 | $0.89 | $2.225,00 |
IKD06N60RATMA1 Übersicht
An IGBT (Insulated-Gate Bipolar Transistor) is a minority-carrier power semiconductor that combines the high-current drive capability of a bipolar transistor with the voltage-controlled gate of a MOSFET. In the reverse-conducting variant (RC-IGBT), the anti-parallel diode is monolithically integrated into the same silicon die, providing a single-chip solution for half-bridge and totem-pole switching stages. The IGBT sits in the power semiconductor hierarchy: IGBT -> power transistor -> discrete semiconductor -> active component, and serves as the workhorse for medium-power (kW range) switching applications operating from 400 V to 1200 V DC bus rails.
Key features include TRENCHSTOP IGBT3 cell technology, monolithic reverse-conducting diode, low VCE(sat) for reduced conduction loss, and a robust short-circuit withstand capability. The field-stop layer minimizes tail current during turn-off, allowing switching frequencies in the 4 kHz to 20 kHz range typical of small motor drives. The PG-TO252-3 (DPAK) package delivers an industry-standard surface-mount footprint with a metal tab that serves as the collector terminal and provides direct PCB heatsinking.
Typical applications include low-power motor drives (drain pumps, fans, mixer motors), washing-machine universal-motor controllers, air-conditioner compressor inverters, and small home-appliance SMPS PFC stages. The wide 600 V rating provides sufficient margin for 230 VAC rectified-bus applications, while the 12 A rating supports motor outputs in the 100 W to 750 W range.
When designing with this device, ensure adequate copper area on the DPAK tab for heatsinking and respect the dv/dt limits during turn-off to avoid parasitic turn-on of the high-side device in half-bridge configurations. A gate resistor of 10-47 ohm is typically recommended for EMI control.
Drop-in-Alternativen für IKD06N60RATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IKD06N60RATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Operating Junction Temperature, Technology, Configuration, Series.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IKD06N60RFATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IKD15N60RFATMA1
✅ Drop-In✓ Auf Lager
$1.35 / Stück
Datenblatt ansehen →IGB50N60TATMA1
✅ Drop-In✓ Auf Lager
$2.2 / Stück
Datenblatt ansehen →STGB7NC60HDT4
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IKD06N60RATMA1 Grenzwerte & elektrische Eigenschaften
| Transistortyp | IGBT - Trench Field Stop with anti-parallel diode |
| Configuration | Single with built-in diode |
| Collector-Emitter Voltage (VCE) | 600 V |
| Continuous Collector Current (IC) at TC=25C | 12 A |
| Maximum Power Dissipation | 100 W |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) |
| Betriebstemperaturbereich | -40C to +150C (junction) |
| Gehäuse | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) |
| RoHS-Status | Compliant |
| Automotive Qualified | Yes (per FindIC listing) |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) |
IKD06N60RATMA1 Pin-Konfiguration
| Pin 1 | Gate — Gate control input (MOSFET-style voltage-controlled gate, 15V typical drive) |
| Pin 2 | Collector — Collector terminal (also connected internally to the metal tab/backside) |
| Pin 3 | Emitter — Emitter terminal (return for gate drive and load current) |
Sicherer Arbeitsbereich (Forward Bias)
Typische Anwendungen
IKD06N60RATMA1 ist geeignet für 6 Anwendungs: Low-Power Induction Cooktop Inverter, Washing Machine Universal-Motor Controller, Small Compressor Inverter (Air Conditioner / Refrigerator), SMPS Power Factor Correction (PFC) Stage, Solar Inverter Auxiliary / Microinverter Stage, Automotive Ignition Coil Driver / DC-DC Converter.
Low-Power Induction Cooktop Inverter
The IKD06N60RATMA1 fits single-burner induction cooktop inverter stages operating from rectified 230 VAC bus rails (DC link 310-340 V) where the 600 V rating provides 2x safety margin and the 12 A rating supports resonant current in the 20-40 kHz half-bridge. The integrated monolithic reverse-conducting diode eliminates an external freewheeling component, reducing the resonant tank BOM count. Compared to a discrete IGBT + diode solution, this part saves one component and approximately 15% board area. Designers should use a gate driver with desaturation detection given the high DC bus voltage and resonant switching conditions.
Empfohlen
Washing Machine Universal-Motor Controller
The IKD06N60RATMA1 is well-suited for the universal-motor PWM controller stage in washing machines where the 600 V rating handles rectified 230 VAC and the 12 A continuous current drives motors up to 750 W. The integrated RC diode simplifies the H-bridge or half-bridge topology by removing the need for external freewheeling diodes. The TRENCHSTOP IGBT3 technology provides fast switching at the 4-16 kHz PWM frequencies typical of motor speed control, while keeping switching losses manageable. Thermal design must account for the DPAK tab being the collector terminal and the only heatsink path.
Empfohlen
Small Compressor Inverter (Air Conditioner / Refrigerator)
For variable-speed compressor inverters in residential air conditioners and refrigerators, the IKD06N60RATMA1 serves as the main switching element in the 3-phase inverter bridge. The 600 V rating supports 230 VAC rectified bus plus switching transients, and the 12 A continuous current covers compressor power ratings up to approximately 750 W (1 HP). The TRENCHSTOP IGBT3 family provides the efficiency needed for variable-frequency drive operation in the 1-20 kHz range. The monolithic diode eliminates external freewheeling components in each phase leg, reducing inverter BOM cost.
Empfohlen
SMPS Power Factor Correction (PFC) Stage
The IKD06N60RATMA1 operates effectively as the switching element in boost-type PFC stages for switch-mode power supplies up to approximately 1 kW. The 600 V rating handles the rectified 230 VAC bus plus PFC boost voltage of 390 VDC, while the 12 A rating covers continuous-mode PFC currents at 1 kW power levels. The hard-switching 4-20 kHz range of TRENCHSTOP IGBT3 is well-matched to traditional PFC converter operating frequencies. Designers should validate switching loss at the actual switching frequency, as IGBTs may exceed MOSFET efficiency at high frequency in this topology.
Empfohlen
Solar Inverter Auxiliary / Microinverter Stage
In small solar microinverters (typically 250-500 W output per panel), the IKD06N60RATMA1 can serve in the DC-DC boost or full-bridge stages where the 600 V rating handles 40 V panel input boosted to grid-tie bus voltages. The 12 A continuous collector current covers the power range typical of single-panel microinverter designs. The integrated RC diode reduces the component count per switching position, which is critical in the compact form factor of microinverter designs. For higher-power string inverters above 1 kW, consider the IKD15N60RFATMA1 or IGB50N60TATMA1 instead.
Empfohlen
Automotive Ignition Coil Driver / DC-DC Converter
The IKD06N60RATMA1, being automotive-qualified per the FindIC listing, fits 12 V/24 V automotive DC-DC converters and ignition coil driver stages. The 600 V collector-emitter rating provides exceptional transient robustness for the harsh automotive environment with load-dump transients up to 100 V and inductive kick from ignition coils. The 12 A continuous current covers typical 200-400 W automotive power supply designs. The integrated RC diode simplifies the boost or buck-boost topology by removing one component per switching position.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IKD06N60RATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IKD06N60RFATMA1 | IKD15N60RFATMA1 | IGB50N60TATMA1 | STGB7NC60HDT4 |
|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current | 12 A | 12 A | 15 A | 50 A | 7 A |
| Integrated Diode | Yes (monolithic RC) | Yes (monolithic RC) | Yes (monolithic RC) | Yes (monolithic) | Yes (co-pack anti-parallel) |
| Technology | TRENCHSTOP RC-IGBT3 | TRENCHSTOP RC-IGBT3 | TRENCHSTOP RC-IGBT3 | TRENCHSTOP | PowerMESH |
Wichtigste Unterscheidungsmerkmale
- Monolithic integrated reverse-conducting diode (vs. STGB7NC60HDT4)
- Higher current rating in same package (vs. IKD15N60RFATMA1)
- TRENCHSTOP RC-IGBT3 technology for hard switching (vs. IRFB4227PBF (200V MOSFET))
Designhinweise
Estimated: At a continuous 6 A load and 2.0 V VCE(sat) (input values typical for IKD06N60RATMA1; confirm from Infineon datasheet curves), power dissipation is approximately 12 W. The DPAK package in PG-TO252-3 has theta_JA around 50 C/W on a 1 sq-in 1 oz copper pad. For 12 W dissipation, junction temperature rises 600 C above ambient - an external heatsink with thermal resistance below 4 C/W is mandatory. Always solder the collector tab to maximize the thermal path, and use thermal vias under the pad for double-sided cooling.
Place the gate driver within 25 mm of the IGBT gate pin to minimize parasitic gate-loop inductance. Use a Kelvin source connection for the gate driver return path to decouple the gate-drive current from the high-current emitter return. Add a 10 kohm gate-to-emitter pull-down resistor to prevent unwanted turn-on from dv/dt-induced gate charge accumulation when the IGBT is in the off state. Provide a tight power-loop layout with input bus capacitance directly across the DC-link and IGBT collector/emitter terminals to minimize switching voltage overshoot.
Do not exceed the maximum VCE of 600 V - leave at least 50% margin (300 V actual working bus) for switching transients and load-dump events. Use a gate resistor of 10-47 ohm to control turn-on/turn-off dV/dt and limit EMI, but do not omit the gate resistor entirely as this can cause parasitic oscillation. Do not parallel IKD06N60RATMA1 devices without derating - IGBTs do not share current as evenly as MOSFETs due to their negative temperature coefficient of VCE(sat). For hard-switching applications above 20 kHz, validate switching losses against your specific operating conditions.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. Automotive-qualified (FindIC listing indicates automotive grade). Halogen-free status not explicitly stated in the provided web data.
