IGD06N60TATMA1 vs IKD15N60RFATMA1 Vergleich

Detaillierter Direktvergleich von IGD06N60TATMA1 von Infineon und IKD15N60RFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IGD06N60TATMA1 IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 ✓ Aktiv
Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IGD06N60TATMA1 IKD15N60RFATMA1
Marke Infineon Infineon
Kategorie Transistors IGBTs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,62 $1,35
Manufacturer Infineon Technologies —
Series TRENCHSTOP IGBT3 —
IGBT Type Trench Field Stop —
Collector-Emitter Voltage (VCE) 600 V —
Continuous Collector Current (IC) at TC=25°C 12 A —
Continuous Collector Current (IC) at TC=100°C 6 A —
Maximum Pulsed Collector Current (ICM) 18 A (per datasheet) —
Maximum Power Dissipation (Ptot) 88 W 250 W
Gate-Emitter Voltage (VGE) ±20 V —
VCE(sat) at IC=6A, VGE=15V, Tj=25°C 1.5 V (typical) —
Gate Threshold Voltage (VGE(th)) 3.0 V min / 5.0 V max (typical 4.0 V) —
Turn-on Switching Energy (Eon) [DATA_NEEDED: Eon] —
Turn-off Switching Energy (Eoff) [DATA_NEEDED: Eoff] —
Integrated Diode Yes, soft-recovery emitter-controlled diode —
Betriebs-Sperrschichttemperatur -40 °C to +175 °C -40C to +175C
Storage Temperature -55 °C to +150 °C —
Gehäuse PG-TO252-3-11 (DPAK / TO-252) PG-TO252-3 (DPAK), 3 pins (2 + tab)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Lead-Free Yes —
Technology — TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode)
Collector-Emitter Voltage (VCES) — 600 V
Continuous Collector Current (IC at TC=25C) — 30 A
Continuous Collector Current (IC at TC=100C) — 15 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES) — +/-20 V
Gate-Emitter Threshold (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
VCE(sat) at IC=15A, VGE=15V — 1.5 V (typical)
Integrated Anti-Parallel Diode — Yes (RC-Drives Fast, co-packaged)
Switching Speed Class — Hard-switching, RC-Drives Fast
Target Application — Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives)
RoHS Compliance — Compliant

Datenblätter & Ressourcen

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