IGLD60R070D1AUMA3 vs BSC076N04NDATMA1 Vergleich
Detaillierter Direktvergleich von IGLD60R070D1AUMA3 von Infineon und BSC076N04NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGLD60R070D1AUMA3 | BSC076N04NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,10 | $0,82 |
| Technology | GaN HEMT (enhancement-mode, normally-off) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc) | 15 A | — |
| Power Dissipation (PD, Tc) | 114 W | — |
| On-Resistance (RDS(on)) | 70 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | 4 V (max, typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) | — |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) | — |
| Gehäuse | PG-LSON-8-1 (LSON-8 with exposed pad) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 3 | — |
| Halogenfrei | Yes | — |
| RoHS-Status | Compliant | — |
| Operating Temperature (Tj) | [DATA_NEEDED: Tj max] | — |
| Series | CoolGaN™ | OptiMOS 3 |
| Polarity | N-Channel | — |
| Packaging | Tape & Reel | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Infineon Technologies |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Gehäuse / Bauform | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |