IGLD60R070D1AUMA3 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IGLD60R070D1AUMA3 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLD60R070D1AUMA3
IGLD60R070D1AUMA3 - 600V 70mΞ© CoolGaNβ’ eMode GaN FET | Infineon
IGLD60R070D1AUMA3 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IGLD60R070D1AUMA3 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.10 | $0.82 |
| Technology | GaN HEMT (enhancement-mode, normally-off) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc) | 15 A | β |
| Power Dissipation (PD, Tc) | 114 W | β |
| On-Resistance (RDS(on)) | 70 mΞ© (typical, VGS = 10 V) | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | 4 V (max, typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss] | β |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) | β |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) | β |
| Package | PG-LSON-8-1 (LSON-8 with exposed pad) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 3 | β |
| Halogen Free | Yes | β |
| RoHS Status | Compliant | β |
| Operating Temperature (Tj) | [DATA_NEEDED: Tj max] | β |
| Series | CoolGaNβ’ | OptiMOS 3 |
| Polarity | N-Channel | β |
| Packaging | Tape & Reel | β |
| Factory Pack Quantity | 3000 | β |
| Manufacturer | β | Infineon Technologies |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |