IGLD60R070D1AUMA3 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IGLD60R070D1AUMA3 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IGLD60R070D1AUMA3 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology GaN HEMT (enhancement-mode, normally-off) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 15 A —
Power Dissipation (PD, Tc) 114 W —
On-Resistance (RDS(on)) 70 mΩ (typical, VGS = 10 V) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] 4 V (max, typical)
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Charge (Qoss) [DATA_NEEDED: Qoss] —
Reverse Recovery Charge (Qrr) Near zero (GaN technology) —
Input Capacitance (Ciss) 380 pF @ 400 V (per Utmel) —
Package PG-LSON-8-1 (LSON-8 with exposed pad) —
Mounting Type Surface Mount Surface Mount
MSL Level 3 —
Halogen Free Yes —
RoHS Status Compliant —
Operating Temperature (Tj) [DATA_NEEDED: Tj max] —
Series CoolGaN™ OptiMOS 3
Polarity N-Channel —
Packaging Tape & Reel —
Factory Pack Quantity 3000 —
Manufacturer — Infineon Technologies
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Operating Junction Temperature — -55 C to +175 C
Package / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Datasheets & Resources

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