IKW50N65H5FKSA1 vs IKW20N60TFKSA1 Vergleich
Detaillierter Direktvergleich von IKW50N65H5FKSA1 von Infineon und IKW20N60TFKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IKW50N65H5FKSA1 | IKW20N60TFKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Transistors | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,45 | $2,15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | IGBT Single Transistor | — |
| Technology | TRENCHSTOP 5 (H5 high-speed family) | — |
| Collector-Emitter Voltage (VCE) | 650 V | — |
| Continuous Collector Current (IC, TC=25C) | 80 A | — |
| Continuous Collector Current (IC, TC=100C) | 50 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Maximum Power Dissipation (Ptot) | 305 W | — |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | 1.65 V at IC = 50 A | — |
| Gate-Emitter Voltage (VGE) max | 20 V (typical rating) | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) value] | — |
| Built-in Diode | Yes, anti-parallel co-packaged diode | — |
| Operating Junction Temperature (Tj) | -40 C to +175 C (typical IGBT max) | — |
| Gehäuse | TO-247 (PG-TO247-3), 3 pins | — |
| Montageart | Through Hole | Through Hole |
| Packing | Tube (240 pcs/tube per Infineon product page) | — |
| RoHS-Status | Compliant (per Infineon) | Compliant |
| Lebenszyklusstatus | Active (per Infineon product page) | — |
| Part Number | — | IKW20N60TFKSA1 |
| Part Status | — | Active |
| IGBT Type | — | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | — | 600 V |
| Current - Collector (Ic) Max @ 25C | — | 40 A |
| Current - Collector (Ic) Continuous | — | 20 A |
| Power - Max | — | 166 W |
| Switching Energy (Eon+Eoff) | — | [DATA_NEEDED: switching energy value] |
| Vce(on) at Ic, Tj=25C | — | [DATA_NEEDED: Vce(sat) at rated condition] |
| Gate Charge (Qg) | — | [DATA_NEEDED: gate charge value] |
| Input Capacitance (Cies) | — | [DATA_NEEDED: input capacitance value] |
| Reverse Recovery Time (trr) of co-packaged diode | — | [DATA_NEEDED: trr value] |
| Td(on)/Td(off) | — | [DATA_NEEDED: turn-on/off delay times] |
| Operating Temperature Junction (Tj) | — | -40C to +175C |
| Gehäuse / Bauform | — | TO-247-3 (PG-TO247-3-1) |
| Diode Configuration | — | Anti-parallel (co-packaged, full-rated) |
| Technology Family | — | TRENCHSTOP IGBT3 |