IKW50N65H5FKSA1 vs IKW20N60TFKSA1 Comparación
Comparación detallada lado a lado de IKW50N65H5FKSA1 por Infineon y IKW20N60TFKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IKW50N65H5FKSA1 | IKW20N60TFKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Transistors | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,45 | $2,15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | IGBT Single Transistor | — |
| Technology | TRENCHSTOP 5 (H5 high-speed family) | — |
| Collector-Emitter Voltage (VCE) | 650 V | — |
| Continuous Collector Current (IC, TC=25C) | 80 A | — |
| Continuous Collector Current (IC, TC=100C) | 50 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Maximum Power Dissipation (Ptot) | 305 W | — |
| Tensión de saturación colector-emisor (Vce(sat)) | 1.65 V at IC = 50 A | — |
| Gate-Emitter Voltage (VGE) max | 20 V (typical rating) | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) value] | — |
| Built-in Diode | Yes, anti-parallel co-packaged diode | — |
| Operating Junction Temperature (Tj) | -40 C to +175 C (typical IGBT max) | — |
| Encapsulado | TO-247 (PG-TO247-3), 3 pins | — |
| Tipo de montaje | Through Hole | Through Hole |
| Packing | Tube (240 pcs/tube per Infineon product page) | — |
| Estado RoHS | Compliant (per Infineon) | Compliant |
| Estado del ciclo de vida | Active (per Infineon product page) | — |
| Part Number | — | IKW20N60TFKSA1 |
| Part Status | — | Active |
| IGBT Type | — | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | — | 600 V |
| Current - Collector (Ic) Max @ 25C | — | 40 A |
| Current - Collector (Ic) Continuous | — | 20 A |
| Power - Max | — | 166 W |
| Switching Energy (Eon+Eoff) | — | [DATA_NEEDED: switching energy value] |
| Vce(on) at Ic, Tj=25C | — | [DATA_NEEDED: Vce(sat) at rated condition] |
| Gate Charge (Qg) | — | [DATA_NEEDED: gate charge value] |
| Input Capacitance (Cies) | — | [DATA_NEEDED: input capacitance value] |
| Reverse Recovery Time (trr) of co-packaged diode | — | [DATA_NEEDED: trr value] |
| Td(on)/Td(off) | — | [DATA_NEEDED: turn-on/off delay times] |
| Operating Temperature Junction (Tj) | — | -40C to +175C |
| Encapsulado / Carcasa | — | TO-247-3 (PG-TO247-3-1) |
| Diode Configuration | — | Anti-parallel (co-packaged, full-rated) |
| Technology Family | — | TRENCHSTOP IGBT3 |