IMT40R011M2HXTMA1 vs ISC011N04NM7VATMA1 Vergleich

Detaillierter Direktvergleich von IMT40R011M2HXTMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IMT40R011M2HXTMA1 ISC011N04NM7VATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $8,74 $0,41
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolSiC™ MOSFET 400 V G2 —
Drain-Source Voltage (VDS) 400 V 40 V
On-Resistance RDS(on), typ 11 mΩ —
Continuous Drain Current (Ta, 25 °C) 13.4 A —
Continuous Drain Current (Tc, case) 144 A —
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 429 W —
Gate Threshold Voltage VGS(th) 4.5 V (typ, benchmark) —
Recommended Gate Drive Voltage 0 V to 18 V —
Technology Silicon Carbide (SiC) Trench MOSFET Trench MOSFET, silicon
Gehäuse PG-HSOF-8-2 (surface mount) PG-TDSON-8 (source-down)
Montageart Surface Mount Surface Mount
Avalanche Rating 100 % avalanche tested —
Body Diode Fast body diode, low Qfr —
Interconnection Technology XT (best-in-class thermal) —
Compliance RoHS compliant (per Infineon product page) —
Product Family — OptiMOS 7 Power-Transistor
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
Betriebstemperaturbereich — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)
MSL-Level — MSL 1 (per JEDEC J-STD-020)

Datenblätter & Ressourcen

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