IMT40R011M2HXTMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IMT40R011M2HXTMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IMT40R011M2HXTMA1
IMT40R011M2HXTMA1 - 400V 11mΞ© CoolSiCβ’ G2 SiC MOSFET | Infineon
IMT40R011M2HXTMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IMT40R011M2HXTMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.74 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolSiCβ’ MOSFET 400 V G2 | β |
| Drain-Source Voltage (VDS) | 400 V | 40 V |
| On-Resistance RDS(on), typ | 11 mΞ© | β |
| Continuous Drain Current (Ta, 25 Β°C) | 13.4 A | β |
| Continuous Drain Current (Tc, case) | 144 A | β |
| Power Dissipation (Ta) | 3.8 W | β |
| Power Dissipation (Tc) | 429 W | β |
| Gate Threshold Voltage VGS(th) | 4.5 V (typ, benchmark) | β |
| Recommended Gate Drive Voltage | 0 V to 18 V | β |
| Technology | Silicon Carbide (SiC) Trench MOSFET | Trench MOSFET, silicon |
| Package | PG-HSOF-8-2 (surface mount) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rating | 100 % avalanche tested | β |
| Body Diode | Fast body diode, low Qfr | β |
| Interconnection Technology | XT (best-in-class thermal) | β |
| Compliance | RoHS compliant (per Infineon product page) | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |
| MSL Level | β | MSL 1 (per JEDEC J-STD-020) |