IPA60R190C6XKSA1 vs IPB60R190C6ATMA1 Vergleich
Detaillierter Direktvergleich von IPA60R190C6XKSA1 von Infineon und IPB60R190C6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPA60R190C6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,45 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS C6 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | 3.5 V (typ) |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C |
| Gehäuse | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO263-3 (D2PAK) |
| Montageart | Through Hole | Surface Mount |
| Tab Isolation | Fully isolated (4 kV) | — |
| RoHS-Status | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | CoolMOS C6 Superjunction N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| MSL-Level | — | 1 |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |