IPA60R190C6XKSA1 vs IPP60R190P6XKSA1 Vergleich
Detaillierter Direktvergleich von IPA60R190C6XKSA1 von Infineon und IPP60R190P6XKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPA60R190C6XKSA1 | IPP60R190P6XKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | CoolMOS P6 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C (junction) |
| Gehäuse | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| Montageart | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| RoHS-Status | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | Superjunction (SJ) MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| On-Resistance RDS(on) max at 25C | — | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | — | 151 W |
| Gate Drive Voltage (typical) | — | 10 V |
| Lead-Free | — | Yes |
| MSL-Level | — | Not applicable (through-hole) |
| Product Variant | — | XKSA1 (industrial grade, tube pack) |