IPA60R190C6XKSA1 vs IPP60R190P6XKSA1 Comparación
Comparación detallada lado a lado de IPA60R190C6XKSA1 por Infineon y IPP60R190P6XKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPA60R190C6XKSA1 | IPP60R190P6XKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $1,02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | CoolMOS P6 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Rango de temperatura de funcionamiento | -55C to +150C | -55C to +150C (junction) |
| Encapsulado | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| Estado RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | Superjunction (SJ) MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| On-Resistance RDS(on) max at 25C | — | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | — | 151 W |
| Gate Drive Voltage (typical) | — | 10 V |
| Lead-Free | — | Yes |
| Nivel MSL | — | Not applicable (through-hole) |
| Product Variant | — | XKSA1 (industrial grade, tube pack) |