IPB014N06NATMA1 vs IPB60R040CFD7ATMA1 Vergleich
Detaillierter Direktvergleich von IPB014N06NATMA1 von Infineon und IPB60R040CFD7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB014N06NATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,10 | $5,19 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Continuous Drain Current (ID) at Ta | 34 A | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 214 W | — |
| On-Resistance RDS(on) max | 1.4 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TO263-7 (D2PAK-7) | PG-TO263-3-2 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench-gate) | Superjunction (SJ) N-Channel MOSFET |
| Avalanche Rating | 100% avalanche tested | — |
| Qualification | JEDEC qualified for target applications | — |
| Primary Application | Synchronous rectification, motor control | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Verlustleistung (TC=25°C) | — | 227 W |
| Betriebstemperaturbereich | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL-Level | — | 1 |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |