IPB014N06NATMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPB014N06NATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB014N06NATMA1 - 60V 180A OptiMOS 5 N-Channel MOSFET | Infineon
IPB014N06NATMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPB014N06NATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $5.19 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Continuous Drain Current (ID) at Ta | 34 A | β |
| Continuous Drain Current (ID) at Tc | 180 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 214 W | β |
| On-Resistance RDS(on) max | 1.4 mΞ© at VGS=10V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench-gate) | Superjunction (SJ) N-Channel MOSFET |
| Avalanche Rating | 100% avalanche tested | β |
| Qualification | JEDEC qualified for target applications | β |
| Primary Application | Synchronous rectification, motor control | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL Level | β | 1 |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |