IPB017N10N5LFATMA1 vs BSC040N10NS5ATMA1 Vergleich

Detaillierter Direktvergleich von IPB017N10N5LFATMA1 von Infineon und BSC040N10NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPB017N10N5LFATMA1 BSC040N10NS5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,05 $0,93
Manufacturer Infineon Technologies —
Series OptiMOS 5 Linear FET —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide Semiconductor) OptiMOS 5
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 180 A —
Continuous Drain Current (ID) @ TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Maximum Power Dissipation (PD) @ TC=25C 313 W —
Drain-Source On-Resistance (RDS(on)) @ VGS=10V 1.7 mΩ (max) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical/min/max]
Betriebstemperaturbereich -55C to +175C (junction) -55C to +150C
Gehäuse / Bauform PG-TO263-7 (D2PAK-7), surface mount —
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
MSL-Level 1 (unlimited) —
Avalanche Rated Yes —
Linear-Mode (SOA) Optimized Yes (OptiMOS Linear FET) —
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
Gehäuse — PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

Datenblätter & Ressourcen

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