IPB019N08N3GATMA1 vs IRFB7545PBF Vergleich
Detaillierter Direktvergleich von IPB019N08N3GATMA1 von Infineon und IRFB7545PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB019N08N3GATMA1 | IRFB7545PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,74 | $0,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | StrongIRFET™ (HEXFET, N-Channel) |
| Drain-to-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 180 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 300 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | — |
| Drive Voltage (Rds On Max) | 6 V, 10 V | — |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | — |
| Input Capacitance (Ciss) | 14.2 nF | — |
| Output Capacitance (Coss) | 3.84 nF | — |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | PG-TO263-7 (D2PAK-6, surface mount) | TO-220AB (Through-Hole) |
| Montageart | Surface Mount | Through Hole (THT) |
| RoHS-Status | Compliant | — |
| Part Number | — | IRFB7545PBF |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) max | — | 60 V |
| VGS (Gate-Source Voltage) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | — | 95 A |
| Pulsed Drain Current (IDM) | — | 380 A |
| Single-Pulse Avalanche Current (IAS) | — | 57 A |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Lead-Free, PBF suffix) |
| MSL-Level | — | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | — | 10 V |
| Avalanche Energy Rated | — | Yes |