IPB019N08N3GATMA1 vs IRFB7545PBF Comparison
Detailed side-by-side comparison of IPB019N08N3GATMA1 by Infineon and IRFB7545PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β Active
Specification Comparison
| Parameter | IPB019N08N3GATMA1 | IRFB7545PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.74 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | StrongIRFETβ’ (HEXFET, N-Channel) |
| Drain-to-Source Voltage (Vdss) | 80 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 180 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 300 W | β |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΞ© | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | β |
| Drive Voltage (Rds On Max) | 6 V, 10 V | β |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | β |
| Input Capacitance (Ciss) | 14.2 nF | β |
| Output Capacitance (Coss) | 3.84 nF | β |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TO263-7 (D2PAK-6, surface mount) | TO-220AB (Through-Hole) |
| Mounting Type | Surface Mount | Through Hole (THT) |
| RoHS Status | Compliant | β |
| Part Number | β | IRFB7545PBF |
| Polarity | β | N-Channel |
| VDS (Drain-Source Voltage) max | β | 60 V |
| VGS (Gate-Source Voltage) max | β | Β±20 V |
| RDS(on) max at VGS=10V | β | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | β | 95 A |
| Pulsed Drain Current (IDM) | β | 380 A |
| Single-Pulse Avalanche Current (IAS) | β | 57 A |
| Power Dissipation (PD) at Tc=25C | β | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 1.0 C/W |
| Operating Junction Temperature | β | -55C to +175C |
| Lead-Free / RoHS | β | Yes (Lead-Free, PBF suffix) |
| MSL Level | β | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | β | 10 V |
| Avalanche Energy Rated | β | Yes |