IPB021N10NM5LF2ATMA1 vs ISK057N04LM6ATLA1 Vergleich
Detaillierter Direktvergleich von IPB021N10NM5LF2ATMA1 von Infineon und ISK057N04LM6ATLA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB021N10NM5LF2ATMA1 | ISK057N04LM6ATLA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,75 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| Betriebstemperaturbereich | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 °C to +150 °C |
| Gehäuse | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | — |
| Montageart | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | Trench (OptiMOS 6) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 |
| Series | — | OptiMOS 6 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tc | — | 64 A |
| Continuous Drain Current (ID) at Ta | — | [DATA_NEEDED: ID at TA=25C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) max] |
| RDS(on) typical at VGS=10V | — | 5.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg total) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 39.1 W |
| Gehäuse / Bauform | — | PG-VSON-6-1 (PQFN 2x2) |
| Packaging | — | Tape & Reel (TR) |
| DigiKey Part Number | — | 448-ISK057N04LM6ATLA1TR-ND |