IPB021N10NM5LF2ATMA1 vs ISK057N04LM6ATLA1 Comparación
Comparación detallada lado a lado de IPB021N10NM5LF2ATMA1 por Infineon y ISK057N04LM6ATLA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB021N10NM5LF2ATMA1 | ISK057N04LM6ATLA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,75 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 °C to +150 °C |
| Encapsulado | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | Trench (OptiMOS 6) |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 |
| Series | — | OptiMOS 6 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tc | — | 64 A |
| Continuous Drain Current (ID) at Ta | — | [DATA_NEEDED: ID at TA=25C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) max] |
| RDS(on) typical at VGS=10V | — | 5.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg total) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 39.1 W |
| Encapsulado / Carcasa | — | PG-VSON-6-1 (PQFN 2x2) |
| Packaging | — | Tape & Reel (TR) |
| DigiKey Part Number | — | 448-ISK057N04LM6ATLA1TR-ND |