IPB024N10N5ATMA1 vs BSF134N10NJ3GXUMA1 Vergleich
Detaillierter Direktvergleich von IPB024N10N5ATMA1 von Infineon und BSF134N10NJ3GXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ AktivInfineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB024N10N5ATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,86 | $0,78 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | Trench-gate OptiMOS planar |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Gehäuse | PG-TO263-7 (D2PAK-7) | MG-WDSON-2 (CanPAK M) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited floor life at <30C/85% RH) | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (13-inch reel) | — |
| Halogenfrei | Yes (per Infineon product family policy) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 100 V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Configuration | — | Single with built-in diode |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |