IPB024N10N5ATMA1 vs BSF134N10NJ3GXUMA1 Comparison
Detailed side-by-side comparison of IPB024N10N5ATMA1 by Infineon and BSF134N10NJ3GXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveInfineon
BSF134N10NJ3GXUMA1
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 β ActiveSpecification Comparison
| Parameter | IPB024N10N5ATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $0.78 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | Trench-gate OptiMOS planar |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | β |
| Power Dissipation (PD, TC=25C) | 250 W | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | β |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | β |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55Β°C to +150Β°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Package | PG-TO263-7 (D2PAK-7) | MG-WDSON-2 (CanPAK M) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (13-inch reel) | β |
| Halogen-Free | Yes (per Infineon product family policy) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 100 V |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 9 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 40 A |
| Power Dissipation (PD) at TA=25Β°C | β | 2.2 W |
| Power Dissipation (PD) at TC=25Β°C | β | 43 W |
| Configuration | β | Single with built-in diode |
| Terminal Position | β | Bottom |
| Terminal Finish | β | Silver Nickel |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | β | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | β | [DATA_NEEDED: trr value] |