IPB037N06N3GATMA1 vs IPB60R040CFD7ATMA1 Vergleich
Detaillierter Direktvergleich von IPB037N06N3GATMA1 von Infineon und IPB60R040CFD7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ AktivInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB037N06N3GATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,41 | $5,19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB037N06N3GATMA1 | — |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | Superjunction (SJ) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | — |
| Total Power Dissipation (Pd) at Tc | 188 W | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction) | -55°C to +150°C |
| Gehäuse / Bauform | PG-TO263-3 (D2PAK, surface mount) | — |
| Montageart | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited) | 1 |
| Drain Tab Connection | Tab electrically tied to drain | — |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Verlustleistung (TC=25°C) | — | 227 W |
| Gehäuse | — | PG-TO263-3-2 (D2PAK) |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |