IPB037N06N3GATMA1 vs IPB60R040CFD7ATMA1 Comparación
Comparación detallada lado a lado de IPB037N06N3GATMA1 por Infineon y IPB60R040CFD7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ ActivoInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB037N06N3GATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,41 | $5,19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB037N06N3GATMA1 | — |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | Superjunction (SJ) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | — |
| Total Power Dissipation (Pd) at Tc | 188 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction) | -55°C to +150°C |
| Encapsulado / Carcasa | PG-TO263-3 (D2PAK, surface mount) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (unlimited) | 1 |
| Drain Tab Connection | Tab electrically tied to drain | — |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Disipación de potencia (TC=25°C) | — | 227 W |
| Encapsulado | — | PG-TO263-3-2 (D2PAK) |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |