IPB072N15N3GATMA1 vs IPB038N12N3GATMA1 Vergleich

Detaillierter Direktvergleich von IPB072N15N3GATMA1 von Infineon und IPB038N12N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPB072N15N3GATMA1 IPB038N12N3GATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,84 $1,78
FET Type N-Channel N-Channel
Technology OptiMOS 3 (trench MOSFET) OptiMOS trench MOSFET
Drain-Source Voltage (V_DS) 150 V —
Continuous Drain Current (I_D, Tc=25C) 100 A —
Continuous Drain Current (I_D, Tc=100C) [DATA_NEEDED: I_D at Tc=100C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed I_DM] —
Maximum Power Dissipation (P_D, Tc=25C) 300 W —
R_DS(on) typical at VGS=10V 7.2 mOhm —
R_DS(on) max at VGS=10V [DATA_NEEDED: max R_DS(on) at VGS=10V] —
Gate-Source Voltage (V_GS) max +/-20 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g typical at VGS=10V] —
Betriebstemperaturbereich -55 C to +175 C -55C to +175C (junction)
Gehäuse PG-TO263-3-2 (D2PAK-2, 3 pins + tab) —
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Avalanche Energy Rated Yes (single-pulse E_AS) —
Intrinsic Body Diode Yes (low Q_rr, sync-rectifier capable) —
Manufacturer Ordering Code Suffix GATMA1 (tape and reel, 1000 pcs) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 120V
Drain-Source Voltage (Vdss) — 120 V
Continuous Drain Current (Id) @ Tc — 120 A
Power Dissipation (Pd) @ Tc — 300 W
On-State Resistance (Rds(on)) — 3.8 mOhm (typical)
Gehäuse / Bauform — PG-TO263-3 (D2PAK)
Gate Drive — Logic-level compatible
Standard Package Quantity — 1000 (Tape & Reel)
Avalanche Rated — Yes

Datenblätter & Ressourcen

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