IPB073N15N5ATMA1 vs IPP075N15N3GXKSA1 Vergleich

Detaillierter Direktvergleich von IPB073N15N5ATMA1 von Infineon und IPP075N15N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPB073N15N5ATMA1 IPP075N15N3GXKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,82 $1,92
Technology OptiMOS 5 (superjunction trench) N-Channel MOSFET (OptiMOS 3)
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25°C 114 A —
On-Resistance RDS(on) max at VGS=10V 7.3 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissition (PD) at Tc=25°C 214 W —
Gehäuse PG-TO263-3-2 (D2PAK-3L, surface mount) PG-TO220-3 (TO-220 through-hole)
Montageart Surface Mount (SMD) Through Hole
Packaging Tape and Reel (suffix ATMA1) —
Betriebstemperaturbereich -55°C to +175°C (junction) [DATA_NEEDED: junction operating temperature range]
Configuration Single N-channel, 3 pins (Gate, Drain, Source) —
RoHS-Status Compliant —
Lead-Free Yes —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

Datenblätter & Ressourcen

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